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GaN for Advanced Power Applications
international research
Other UE programmes
ECSEL 2020-1 for Innovation Actions (IA)
Main ERC field: 
Physical Sciences and Engineering
Unict role: 
Third part
Duration (months): 
Start date: 
Tuesday, June 1, 2021
End date: 
Friday, May 31, 2024
Total cost: 
€ 64.021.545,82
Unict cost: 
€ 1.350.000,00
Distretto Tecnologico Sicilia Micro e Nano Sistemi Scarl
Principal investigator in Unict: 
Prof. Giacomo Scelba
University department involved: 
Department of Electrical, Electronic and Computer Engineering
  • [IT] DTSMNS, Iunet Consorzio Nazionale Interuniversitario per la Nanoelettronica, Eda, Eldor, Enel-X, Ferrari, Mecaprom, Synergie Cad 
  • [DE] Aeg, Aixtron, Atv, Dock, Fcm, Fhws; Finepower, Luh, Schneider-De, Sempa, Wurth, Vsea-De
  • [FR] Apsi3d, Cea, Cnrs, Schneider-F, St-R, St-T, Vsea-F, Unitou, Valeo 
  • [PI] Ihpp
  • [CZ] Ima, St-Cz, Unipra
  • [NI] Nxp (Nl), Tu/E
  • [I] St-I


GaN4AP project has the ambitious target of making the GaN-based electronics to become the main power active device present in all power converter systems, with the possibility of developing a close-to-zero energy loss power electronic systems.
GaN4AP project will:

  1. Develop innovative Power Electronic Systems for power conversion and management with advanced architecture and circuit topology based on state of the art GaN-based High Electron Mobility Transistors (HEMTs) available in a new concept high-frequency packages that can achieve the requested 99% power conversion efficiency.
  2. Develop an innovative material (Aluminium Scandium Nitride, AlScN) that combined with advanced growth and process solutions can provide outstanding physical properties for highly efficient power transistors. Therefore, a new HEMT device architecture will be fabricated with much higher current (2x) and power density (2x) than existing transistors.
  3. Develop a new generation of vertical power GaN-based devices on MOSFET architecture with vertical p-GaN inversion channel for safe power switching up to 1200 V. We will cover all the production chain from the device design, processing and characterization up to tests in low inductance half bridge power modules and their implementation in high speed power switching systems.
  4. Develop a new intelligent and integrated GaN solutions (STi2GaN) both in System in Package (SiP) and Monolithic variances, that will allow the generation of E-Mobility power converters. The projects will focus on scalable concept for 48V-12V bidirectional Buck Boost converters for conventional and ADAS applications combining, in a novel wire-bond free package, a state of the art BCD driver & controller along with a common substrate Monolithic 100V e-GaN Half Bridge.

The development of new device technologies and innovative power circuits, employing the GaN-based devices is a crucial factor for the world-wide competitiveness of EU industries